Cubic GaN LED Materials Breakthrough Creates New Opportunities for Higher Efficiency Full-Spectrum Lighting and Displays
Troy, N.Y. — A team of faculty and graduate students from the Center for Lighting Enabled Systems & Applications (LESA), headquartered at Rensselaer Polytechnic Institute, and the University of New Mexico (UNM) were recently awarded a U. S. patent titled “Growth of Cubic Crystalline Phase Structure on Silicon Substrates and Devices Comprising the Cubic Crystalline Phase.” Cubic gallium nitride (GaN) devices hold promise for addressing two long-standing issues that limit the performance of light emitting diodes (LEDs).